The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures
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چکیده
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ژورنال
عنوان ژورنال: Optical and Quantum Electronics
سال: 2017
ISSN: 0306-8919,1572-817X
DOI: 10.1007/s11082-017-0941-7